General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features

· 21 A, 30 V RDS(ON) = 35 mW @ VGS = 10 V

RDS(ON) = 50 mW @ VGS = 4.5 V

· Low gate charge (5nC typical)

· Fast switching

· High performance trench technology for extremely low RDS(ON)

Applications

· DC/DC converter

· Motor drives