General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features

• 21 A, 20 V

RDS(ON) = 32 mW @ VGS = 4.5 V

RDS(ON) = 47 mW @ VGS = 2.5 V

• Low gate charge (6.5 nC typical)

• Fast switching

• High performance trench technology for extremely

low RDS(ON)

Applications

• DC/DC converter

• Motor drives