General Description

This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V

RDS(on) = 0.025 Ω @ VGS = 6 V.

• Low gate charge (33nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low RDS(on).

Applications

• DC/DC converter

• Motor drives