General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V

RDS(ON) = 470 mΩ @ VGS = 6 V

• Low gate charge (8nC typical)

• Fast switching

• High performance trench technology for extremely

low RDS(ON)

.