General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –6 A, –12 V.

RDS(ON) = 26 mΩ @ VGS = –4.5 V

RDS(ON) = 35 mΩ @ VGS = –2.5 V

RDS(ON) = 53 mΩ @ VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

Applications

• Battery management

• Load switch

• Battery protection