General Description

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Features

• –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.8 V

• Low gate charge, High Power and Current handling capability

• High performance trench technology for extremely low RDS(ON)

• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

Applications

• Battery management/Charger Application

• Load switch