General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –5.5 A, –20 V RDS(ON) = 35 mW @ VGS = –4.5 V

RDS(ON) = 50 mW @ VGS = –2.5 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

Applications

• Battery management

• Load switch

• Battery protection