General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) .

Features

• 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V

• Critical DC electrical parameters specified at elevated temperature

• High performance trench technology for extremely low RDS(ON)

• 175°C maximum junction temperature rating

Applications

• Synchronous rectifier

• DC/DC converter