General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

• 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V

RDS(ON) = 0.011 Ω @ VGS = 6 V.

• Critical DC electrical parameters specified at

elevated temperature.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient

suppressor.

• High performance trench technology for extremely

low RDS(ON).

• 175°C maximum junction temperature rating.