N-Channel SupreMOS® MOSFET

600 V, 6.8 A, 520 mΩ

Description

The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

• RDS(on) = 460 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A

• Ultra Low Gate Charge (Typ.Qg = 17.8 nC)

• Low Effective Output Capacitance (Typ. Coss.eff = 91 pF)

• 100 Avalanche Tested

• RoHS Compliant

Application

• LCD/LED TV and Monitor

• Lighting

• Solar Inverter

• AC-DC Power Supply