N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

• 650 V @ TJ = 150°C

• Typ. RDS(on) = 510 mΩ

• Ultra Low Gate Charge (Typ. Qg = 20 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)

• 100 Avalanche Tested

• ESD Improved Capacity

• RoHS Compliant

Applications

• LCD / LED / PDP TV and Monitor Lighting

• Solar Inverter

• AC-DC Power Supply