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F6N80中文资料

厂家型号

F6N80

文件大小

1018.14Kbytes

页面数量

10

功能描述

N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓

数据手册

下载地址一下载地址二到原厂下载

生产厂商

FAIRCHILD

F6N80数据手册规格书PDF详情

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A

• Low Gate Charge (Typ. 21 nC)

• Low Crss (Typ. 8 pF)

• 100 Avalanche Tested

更新时间:2025-11-26 14:02:00
供应商 型号 品牌 批号 封装 库存 备注 价格
KERSEMI
TO-220F
22+
6000
十年配单,只做原装
DONGHAI
23+
TO-220F
80000
原装正品,一级代理
KERSEMI
23+
TO-220F
8400
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KERSEMI
25+
TO-TO-220F
12300
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ST
25+
TO-220F
16900
原装,请咨询
ST
2022+
42
全新原装 货期两周
ST
19+
TO-220F
500
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ST
2511
TO-220F
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/进口原
17+
TO-220F
6200
ST/进口原
24+
TO-220F
5000
全现原装公司现货