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DM81LS95中文资料
DM81LS95数据手册规格书PDF详情
General Description
These devices provide eight, two-input buffers in each package. All employ low-power-Schottky TTL technology. One of the two inputs to each buffer is used as a control line to gate the output into the high-impedance state, while the other input passes the data through the buffer. The DM81LS95A and DM81LS97A present true data at the outputs, while the DM81LS96A is inverting. On the DM81LS95A and DM81LS96A versions, all eight 3-STATE enable lines are common, with access through a 2-input NOR gate. On the DM81LS97A version, four buffers are enabled from one common line, and the other four buffers are enabled form another common line. In all cases the outputs are placed in the 3-STATE condition by applying a high logic level to the enable pins.
Features
■Typical power dissipation
DM81LS95A, DM81LS97A 80 mW
DM81LS96A 65 mW
■Typical propagation delay
DM81LS95A, DM81LS97A 15 ns
DM81LS96A 10 ns
■Low power-Schottky, 3-STATE technology
DM81LS95产品属性
- 类型
描述
- 型号
DM81LS95
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
3-STATE Octal Buffer
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
FAIRCHILD |
2023+ |
SMD |
3120 |
安罗世纪电子只做原装正品货 |
|||
FAIRCHILD |
05+ |
原厂原装 |
4597 |
只做全新原装真实现货供应 |
|||
FAIRCHILD/仙童 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
onsemi(安森美) |
24+ |
SOIC20 |
907 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
NSC |
24+/25+ |
17 |
原装正品现货库存价优 |
||||
NS |
24+ |
DIP-20 |
2630 |
||||
NS |
22+ |
DIP |
8000 |
原装正品支持实单 |
|||
NSC |
8432+ |
DIP20 |
558 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NS |
2023+环保现货 |
DIP-20 |
10 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
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DM81LS95 芯片相关型号
Datasheet数据表PDF页码索引
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Fairchild Semiconductor 飞兆/仙童半导体公司
Fairchild Semiconductor是一家曾经存在的半导体制造商,总部位于美国加州圣克拉拉。Fairchild Semiconductor成立于1957年,是最早期的半导体公司之一,专注于生产各种半导体器件,包括晶体管、集成电路、功率模块等产品。 Fairchild Semiconductor在半导体行业具有悠久的历史和丰富的经验,曾经是全球领先的半导体公司之一,其产品被广泛应用于消费电子、通信、工业、汽车等领域。Fairchild Semiconductor以其创新的技术和高性能的产品而闻名,拥有众多专利和技术成果。 2016年,Fairchild Semiconductor被ON