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D217R2V801S中文资料

厂家型号

D217R2V801S

文件大小

3035.7Kbytes

页面数量

10

功能描述

Dual Channel Phototransistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

FAIRCHILD

D217R2V801S数据手册规格书PDF详情

Description

The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

Features

■ UL Recognized (File #E90700, Volume 2)

■ VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217VM)

■ Low Input Current (specified @ 1mA)

■ Minimum BVCEO of 30 Volts Guaranteed

■ Convenient Plastic SOIC-8 Surface Mountable Package Style

■ Standard SOIC-8 Footprint, with 0.050 Lead Spacing

■ High Input-Output Isolation of 2500 VAC(rms) Guaranteed

Applications

■ Interfacing and Coupling Systems of Different Potentials and Impedances

■ General Purpose Switching Circuits

■ Monitor and Detection Circuits

更新时间:2025-10-27 11:10:00
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