Description

This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast

switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product

is particularly suited to low-voltage applications requiring a low-current high-side switch.

Features

♦-0.13 A, -50 V, RDS(ON) = 10 Ωat VGS= -5 V

♦Voltage-Controlled P-Channel Small-SignalSwitch

♦High-Density Cell Design for Low RDS(ON)

♦High Saturation Current