General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features

■ BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.

BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V

■ Voltage controlled p-channel small signal switch.

■ High density cell design for low RDS(ON) .

■ High saturation current.