Features

• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A

• Low Gate Charge (Typ. 14 nC)

• Low Crss (Typ. 5 pF)

• 100% Avalanche Tested

• Improve dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

Applications

• LCD/LED TV • Uninterruptible Power Supply

• Lighting • AC-DC Power Supply

Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also

provides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp

ballasts.