General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

● 7.1 A, 20 V.

RDS(ON) = 20 mW @ VGS = 4.5 V

RDS(ON) = 26 mW @ VGS = 2.5 V

● Extended VGSS range (±12V) for battery applications

● ESD protection diode (note 3)

● High performance trench technology for extremely low RDS(ON)

● Low profile TSSOP-8 package

Applications

Li-Ion Battery Pack