Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

active power factor correction (PFC), and electronic lamp

ballasts

Features

• 16 A, 400 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V,

ID = 8.0 A

• Low Gate Charge (Typ. 45 nC)

• Low Crss (Typ. 30 pF)

• 100% Avalanche Tested