300V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 300V • IC = 3.5A High Continuous Collector Current • ICM = 5A Peak Pulse Current • Very Low Saturation Voltage VCE(SAT)

300V NPN MEDIUM POWER TRANSISTOR

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封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：PWR HI VOLTAGE TRANSISTOR SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

857 Series High Temp Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

General Purpose Transistor

Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified.

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

boxes and ancillary products

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