IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1800 A / ICRM = 3600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient • Mechanical features - Package with CTI > 600 -

4500 V、1800 A 单开关 IGBT 模块

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1800 A / ICRM = 3600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient • Mechanical features - Package with CTI > 600 -

IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1800 A / ICRM = 3600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCEsat - Trench IGBT 4 - VCEsat with positive temperature coefficient • Mechanical features - Package with CTI > 600 - St

IGBT 模块

封装/外壳：模块 包装：托盘 描述：IHV IHM T XHP 3 3-6 5K AG-IHVB19 分立半导体产品 晶体管 - IGBT - 模块

封装/外壳：模块 包装：托盘 描述：IGBT MODULE 分立半导体产品 晶体管 - IGBT - 模块