HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ............................................. 12.3mΩ • ID .................................................................... –70A • Integrated Fast Recovery Diode (TYP.) ...........70ns •

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ............................................. 12.3mΩ • ID .................................................................... –70A • Integrated Fast Recovery Diode (TYP.) ...........70ns •

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 12.3 mΩ • ID : –70 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

Power MOSFETs

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 12.3 mΩ • ID : –70 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 12mΩ ● ID ............................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 12mΩ ● ID ............................................................................

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 8.0 mΩ • ID : 70 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=70A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HIGH-SPEED SWITCHING USE

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