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FX2晶体管资料
FX2368别名:FX2368三极管、FX2368晶体管、FX2368晶体三极管
FX2368生产厂家:美国范恰得公司
FX2368制作材料:Si-NPN
FX2368性质:高速开关 (SS)
FX2368封装形式:
FX2368极限工作电压:40V
FX2368最大电流允许值:0.2A
FX2368最大工作频率:<1MHZ或未知
FX2368引脚数:
FX2368最大耗散功率:0.36W
FX2368放大倍数:β>20
FX2368图片代号:NO
FX2368vtest:40
FX2368htest:999900
- FX2368atest:0.2
FX2368wtest:0.36
FX2368代换 FX2368用什么型号代替:
FX2价格
参考价格:¥18.7734
型号:FX20-100P-0.5SV20 品牌:Hirose Connector 备注:这里有FX2多少钱,2025年最近7天走势,今日出价,今日竞价,FX2批发/采购报价,FX2行情走势销售排行榜,FX2报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
FX2 | Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | ||
FX2 | 1.27mm Pitch Multi-function Two Piece Connector 文件:728.43 Kbytes Page:34 Pages | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | ||
Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Very High-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Very High-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Very High-Speed Switching Applications Features • Low ON-resistance. • Very high-speed switching. • 2.5V drive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ........................................................................... | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ........................................................................... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ........................................................................... | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Isc P-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................ –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID ................................................................... –20A • Integrated Fast Recovery Diode | POWEREX Powerex Power Semiconductors | |||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. | |||
Useful of 8,000 hours at 85ºC Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series. | AICTECH AIC tech Inc. |
替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Television Chroma System | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
Integrated Circuit Chroma Subcarrier Regeneration | NTENTE Electronics |
FX2产品属性
- 类型
描述
- 型号
FX2
- 制造商
Delta Design
- 功能描述
BASE BEACON MOUNT
- 制造商
Delta Design
- 功能描述
BASE, BEACON MOUNT
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HRS广濑 |
22+ |
SMD |
160 |
原装最新批次库存现货实单来聊 |
|||
HIROSE |
25+ |
SMD |
8800 |
芯泽盛世只做原装,原装现货,支持实单 |
|||
F |
24+ |
DIP |
66800 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
HRS |
22+ |
SMD |
504 |
进口原装公司现货热卖 |
|||
HRS/广濑 |
23+ |
Connector |
6500 |
只做原装正品现货或订货假一赔十! |
|||
CML |
25+ |
DIP |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
HIROSE/广濑 |
24+ |
SMD |
700 |
公司原装现货库存,假一赔十 |
|||
CML |
2021+ |
PLCC-24 |
6800 |
原厂原装,欢迎咨询 |
|||
FX |
21+ |
CDIP16 |
10000 |
全新原装 公司现货 价格优 |
|||
HRS |
23+ |
SMD |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
FX2规格书下载地址
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FX2数据表相关新闻
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2020-1-4FX30B-5S-3.81DSA
深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777
2019-6-6
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