FX2晶体管资料

  • FX2368别名:FX2368三极管、FX2368晶体管、FX2368晶体三极管

  • FX2368生产厂家:美国范恰得公司

  • FX2368制作材料:Si-NPN

  • FX2368性质:高速开关 (SS)

  • FX2368封装形式

  • FX2368极限工作电压:40V

  • FX2368最大电流允许值:0.2A

  • FX2368最大工作频率:<1MHZ或未知

  • FX2368引脚数

  • FX2368最大耗散功率:0.36W

  • FX2368放大倍数:β>20

  • FX2368图片代号:NO

  • FX2368vtest:40

  • FX2368htest:999900

  • FX2368atest:0.2

  • FX2368wtest:0.36

  • FX2368代换 FX2368用什么型号代替

FX2价格

参考价格:¥18.7734

型号:FX20-100P-0.5SV20 品牌:Hirose Connector 备注:这里有FX2多少钱,2025年最近7天走势,今日出价,今日竞价,FX2批发/采购报价,FX2行情走势销售排行榜,FX2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FX2

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH
FX2

1.27mm Pitch Multi-function Two Piece Connector

文件:728.43 Kbytes Page:34 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Ultrahigh-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Very High-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Very High-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Very High-Speed Switching Applications

Features • Low ON-resistance. • Very high-speed switching. • 2.5V drive.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ...........................................................................

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ...........................................................................

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ...........................................................................

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Isc P-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................ –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID ................................................................... –20A • Integrated Fast Recovery Diode

POWEREX

Powerex Power Semiconductors

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

AICTECH

AIC tech Inc.

AICTECH
替换型号 功能描述 生产厂家&企业 LOGO 操作

Television Chroma System

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

Integrated Circuit Chroma Subcarrier Regeneration

NTENTE Electronics

NTE

FX2产品属性

  • 类型

    描述

  • 型号

    FX2

  • 制造商

    Delta Design

  • 功能描述

    BASE BEACON MOUNT

  • 制造商

    Delta Design

  • 功能描述

    BASE, BEACON MOUNT

更新时间:2025-8-6 10:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HRS广濑
22+
SMD
160
原装最新批次库存现货实单来聊
HIROSE
25+
SMD
8800
芯泽盛世只做原装,原装现货,支持实单
F
24+
DIP
66800
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
HRS
22+
SMD
504
进口原装公司现货热卖
HRS/广濑
23+
Connector
6500
只做原装正品现货或订货假一赔十!
CML
25+
DIP
6500
十七年专营原装现货一手货源,样品免费送
HIROSE/广濑
24+
SMD
700
公司原装现货库存,假一赔十
CML
2021+
PLCC-24
6800
原厂原装,欢迎咨询
FX
21+
CDIP16
10000
全新原装 公司现货 价格优
HRS
23+
SMD
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

FX2芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

FX2数据表相关新闻