MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting. •

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 3560 A Surge current 30 kA

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

Silicon Rectifier Diode

Description: The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 150 nanoseconds providing high efficiency