21555AA/BA and 21555AB/BB Differences

文件：52.89 Kbytes Page：6 Pages

21555AA/BA and 21555AB/BB Differences

21555AA/BA and 21555AB/BB Differences

文件：52.89 Kbytes Page：6 Pages

21555AA/BA and 21555AB/BB Differences

文件：52.89 Kbytes Page：6 Pages

21555AA/BA and 21555AB/BB Differences

文件：52.89 Kbytes Page：6 Pages

21555AA/BA and 21555AB/BB Differences

文件：52.89 Kbytes Page：6 Pages

UHF variable capacitance diode

DESCRIPTION The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package. FEATURES • Excellent linearity • Matched to 3 • Small hermetically sealed glass SMD package • C28: 2 pF; ratio: 8.3 • Low series resistance. APPLICATIONS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

Silicon NPN Transistor Darlington Driver

Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic