Dual N-Channel Enhancement Mode MOSFET

■ Features ● RDS(ON)=30mΩ Max. @VGS=4V ● RDS(ON)=45mΩ Max. @VGS=2.5V

Load Switching Applications

Load Switching Applications Features • Low ON resistance. • 2.5V drive. • Mounting height 1.1mm. • Composite type, facilitating high-density mounting.

N-Channel Silicon MOSFET Load Switching Applications

N CHANNEL MOS SILICON TRANSISTOR

Load Switching Applications Features • Low ON-resistance. • 2.5V drive. • Mounting height 1.1mm. • Composite type, facilitating high-density mounting.

N CHANNEL MOS SILICON TRANSISTOR

2011 Series - Fast Acting GDT Surge Arrestor with FLAT® Technology

Features ■ Bourns® FLAT® GDT technology ■ Improved impulse performance ■ Flexible mounting options ■ Stable breakdown throughout life ■ Volume- and space-saving design ■ UL Recognized ■ RoHS compliant* and halogen free** Applications ■ Telecommunications ■ Industrial Communications ■

Snap Bushings

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Crimp Information Sheet

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Crimp Information Sheet

文件：149.57 Kbytes Page：12 Pages

INTEGRAL ELECTRONICS (IEPE) PIEZOELECTRIC ACCELEROMETER

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