位置：首页 > IC中文资料第8258页 > FTD1029
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FTD1029 | P-Channel Silicon MOSFET General-Purpose Switching Device Features • Low ON-resistance. • 4V drive. • Mounting height 1.1mm. • Composite type, facilitating high-density mounting. | SANYO 三洋 |   | |
FTD1029 | P-Channel Silicon MOSFET General-Purpose Switching Device | ONSEMI 安森美半导体 | | |
Signal-sources switch Signal-sources switch The TDA1029 is a dual operational amplifier (connected as an impedance converter) each amplifier having 4 mutually switchable inputs which are protected by clamping diodes. The input currents are independent of switch position and the outputs are short-circuit protected. | PHILIPS 飞利浦 | | ||
LINEAR BUILDING BLOCK - DUAL LOW POWER OP AMP 文件：25.55 Kbytes Page：1 Pages | TELCOM | | ||
LINEAR BUILDING BLOCK - DUAL LOW POWER OP AMP 文件：25.55 Kbytes Page：1 Pages | TELCOM | | ||
LINEAR BUILDING BLOCK - DUAL LOW POWER OP AMP 文件：25.55 Kbytes Page：1 Pages | TELCOM | | ||
LINEAR BUILDING BLOCK - DUAL LOW POWER OP AMP 文件：25.55 Kbytes Page：1 Pages | TELCOM | |
FTD1029产品属性
- 类型
描述
- 型号
FTD1029
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
P-Channel Silicon MOSFET General-Purpose Switching Device
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
FTD1029规格书下载地址
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2020-5-25
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