| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | ||
HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
4 X 13 - 2 X 38W AUDIO POWER AMPLIFIER 2 X 13 1 X 38W AUDIO POWER AMPLIFIER 1. HIGH OUTPUT POWER CAPABILITY 2. MINIMUM EXTERNAL COMPONENTS COUNT: – NO BOOTSTRAP CAPACITORS – NO BOUCHEROT CELLS – INTERNALLY FIXED GAIN (26dB BTL) 3. ST-BY FUNCTION (CMOS COMPATIBLE) 4. NO AUDIBLE POP DURING ST-BY OPERATIONS | STMICROELECTRONICS 意法半导体 | | ||
RF AMPLIFIER 文件：71.05 Kbytes Page：1 Pages | SPECTRUM | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/IR |
2023+ |
SOP-8 |
3172 |
一级代理优势现货,全新正品直营店 |
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IR |
2450+ |
SOP-8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
IR |
05+ |
SO-8 |
5445 |
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IR |
17+ |
SO-8 |
6200 |
100%原装正品现货 |
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IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
23+ |
SO-8 |
7000 |
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IR |
23+ |
65480 |
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IR |
23+ |
SOP-8 |
67057 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
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IR |
05+ |
SO-8 |
5445 |
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|||
IR |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
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2020-12-8
DdatasheetPDF页码索引
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