位置：首页 > IC中文资料第6298页 > FSYE913A0D1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSYE913A0D1 | RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | Intersil Intersil Corporation |  |   |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | | | |
10A,-100V,0.280Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | | |
FSYE913A0D1产品属性
- 类型
描述
- 型号
FSYE913A0D1
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYE913A0D1芯片相关品牌
FSYE913A0D1规格书下载地址
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FSYE913A0D1数据表相关新闻
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DdatasheetPDF页码索引
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