位置:首页 > IC中文资料第6245页 > FSYC264D3
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
FSYC264D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | ||
33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil |
FSYC264D3产品属性
- 类型
描述
- 型号
FSYC264D3
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
N/A |
N/A |
100 |
军工品,原装正品 |
|||
INTERSIL |
14+ |
原厂封装 |
9 |
宇航IC只做原装假一罚十 |
|||
INTERSIL |
18+ |
原厂原装假一赔十 |
99 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
INTERSIL |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
INTERSIL |
24+ |
10 |
全新原装 |
||||
INTERSIL |
2015+ |
99 |
原装正品 |
FSYC264D3芯片相关品牌
FSYC264D3规格书下载地址
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FSYC264D3数据表相关新闻
FSV560
FSV560
2024-9-27FT10302N0050JBK
优势渠道
2023-3-2FSUSB30UMX
https://hch01.114ic.com/
2020-11-13FSX027WF 假一罚十
原厂 原包装 绝无虚假
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2019-7-31
DdatasheetPDF页码索引
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