80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

PWM CHOPPER TYPE BIPOLAR STEPPING MOTOR DRIVER

文件：470.13 Kbytes Page：25 Pages

PWM CHOPPER TYPE BIPOLAR STEPPING MOTOR DRIVER

文件：470.13 Kbytes Page：25 Pages