位置：首页 > IC中文资料第6245页 > FSPYE230R4
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSPYE230R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star | Intersil |   | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystem | Intersil | | ||
5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power™ Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Sta | Intersil | |
FSPYE230R4产品属性
- 类型
描述
- 型号
FSPYE230R4
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIP8 |
14+ |
FAIRCHILD |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
25+ |
DIP-8 |
1176 |
原装正品,假一罚十! |
|||
FAIRCHILD |
25+ |
8LSOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
F |
23+ |
65480 |
|||||
Fairchild |
NEW |
8-LSOP |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
329 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCILD |
22+ |
DIP-8 |
8000 |
原装正品支持实单 |
|||
FAIRCHILDSEM |
24+ |
8-LSOP |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD/仙童 |
23+ |
SOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD |
24+ |
DIP-8 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
FSPYE230R4芯片相关品牌
FSPYE230R4规格书下载地址
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2019-4-2
DdatasheetPDF页码索引
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