位置：首页 > IC中文资料第6245页 > FSPYE230D1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSPYE230D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star | INTERSIL |   | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystem | INTERSIL | | ||
5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | |
FSPYE230D1产品属性
- 类型
描述
- 型号
FSPYE230D1
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI/亚德诺 |
26+ |
NA |
60000 |
原装正品,可BOM配单 |
|||
N/A |
2450+ |
QFP |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
FAIRCHILD/仙童 |
2403+ |
SOP8 |
11809 |
原装现货!欢迎随时咨询! |
|||
FOSLINK |
2015+ |
SOP8 |
19898 |
专业代理原装现货,特价热卖! |
|||
KYOCERA |
06+ |
QFP |
400 |
全新 发货1-2天 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FSP |
02+ |
130 |
优势货源原装正品 |
||||
FSP |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ADI/亚德诺 |
25+ |
NA |
20000 |
原装 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
FSPYE230D1芯片相关品牌
FSPYE230D1规格书下载地址
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2019-4-2
DdatasheetPDF页码索引
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