位置：首页 > IC中文资料第6313页 > FSGYC264D1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil |   | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | |
FSGYC264D1产品属性
- 类型
描述
- 型号
FSGYC264D1
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
14+ |
原厂封装 |
9 |
宇航IC只做原装假一罚十 |
|||
TI |
N/A |
N/A |
100 |
军工品,原装正品 |
|||
INTERSIL |
18+ |
原厂原装假一赔十 |
99 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
INTERSIL |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
INTERSIL |
24+ |
10 |
全新原装 |
||||
INTERSIL |
2015+ |
99 |
原装正品 |
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2013-3-11
DdatasheetPDF页码索引
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