SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase noise performance. These parts can be used with control voltages from 0

Hyperabrupt Varactor Diode

丝印代码：55；SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase noise performance. These parts can be used with control voltages from 0

包装：卷带（TR） 描述：DIODE VARACTOR CAP CC SOT-323 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

OCTAL D-TYPE FLIP FLOP WITH CLEAR

DESCRIPTION The 74VHCT273A is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP WITH CLEAR fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 170 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ COMPATIBLE

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs High–Performance Silicon–Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device c

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

Square Type

□ 5.0 mm × 5.0 mm Series

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: • High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC