单节锂电池保护IC

The FS326E protection IC for Li-ion/polymer rechargeable one-cell batteries maintains high accurate detections of the abnormal cell activities and the corresponding delay time in order to have protections against the events of over charge, over discharge, and over current.\r\n\r\n In the observat ·Low supply current\r\n·Overcharge detection voltage: 4.30±0.04 V\r\n·Overcharge release voltage: 4.08±0.05 V\r\n·Over discharge detection voltage: 2.50±0.08 V\r\n·Over discharge release voltage: 2.90±0.08 V\r\n·Over current detection voltage: 150±30 mV\r\n·Short circuit detection voltage: 1.35 V\r\;

One Cell Lithium-ion/Polymer Battery Protection IC

文件：909.9 Kbytes Page：14 Pages

POWER TRANSISTORS(6A,375-400V,75W)

NPN SILICON POWER TRANSISTOR The BU326 and BU326A Type are a fast switching high voltage transistor, more specially intended for in color TV receivers chopper supplies.

POWER TRANSISTORS(6A,375-400V,75W)

NPN SILICON POWER TRANSISTOR The BU326 and BU326A Type are a fast switching high voltage transistor, more specially intended for in color TV receivers chopper supplies.

HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ FAST SWITCHING SPEED APPLICATIONS: ■ POWER SUPPLIES ■ LINEAR AND SWITCHING IND

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB • Built–In Matching Network for Broadb

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi