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FS2305

低压MOS管

FOSAN

富信半导体

Safety system basis chip (SBC) with power management, CAN FD and LIN transceivers

ETC

知名厂家

Safety system basis chip (SBC) with power management, CAN FD and LIN transceivers

ETC

知名厂家

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

NTE

丝印代码:A5***;P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated

VISHAYVishay Siliconix

威世威世科技公司

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件:228.09 Kbytes Page:14 Pages

NSC

国半

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件:228.09 Kbytes Page:14 Pages

NSC

国半

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件:228.09 Kbytes Page:14 Pages

NSC

国半

FS2305产品属性

  • 类型

    描述

  • Polarity:

    Single-P

  • PD(W):

    0.35

  • VDS(V):

    -12

  • VGS(V):

    -8

  • ID(A):

    -4.1

  • RDS(Ω):

    0.045

  • VGS(th)(V):

    -0.9

更新时间:2026-5-25 9:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择

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