FS22 - 流量开关, 22MM, 3.75L/MIN

The FS15 series Flow Switch is a reed switch based device which is manufactured in Acetal resin. This switch is designed for use in liquid flow systems up to 10bar reassure. Advanced design ensures minimal fluid flow restriction. The flow switch can be mounted horizontally or vertically. As the oper ·WRAS approval\n·Temperature rated to 85°C (185°F);

FS22 Schottky Barrier Rectifiers

肖特基整流管

Surface Mount Schottky Rectifier

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Flashers and Tower Lighting Controls

Description The FS200 Series may be used to control inductive, incandescent, or resistive loads. Factory fixed flash rate of 45 or 90 FPM or may be ordered with a fixed custom flash rate ranging from 10 to 180 FPM. Encapsulation provides protection against shock, vibration, and humidity. Unif

Evaluation Driver Boards for EconoDUAL™3 and EconoPACK™ modules

The 2ED100E12-F2 and the 6ED100E12-F2 Evaluation Driver Board offer the following features:  Dual channel IGBT driver in 2ED100E12-F2 version, adapted for use with IGBT4  Six channel IGBT driver in 6ED100E12-F2 version  Electrically and mechanically suitable for 600 V and 1200 V EconoDUAL™ 3

IGBT-Modules

- EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode

Technische Information / Technical Information

- EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode

EconoPACK module with trench/fieldstop IGBT and EmCon3 diode

EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode

HIGH-SPEED SWITCHING USE

● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.29Ω ● ID ......................................................................................... 22A APPLICATION SM

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.29Ω ● ID ......................................................................................... 22A APPLICATION SM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=22A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.29Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=22A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.30Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=22A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.24Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 450V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID ......................................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 450V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID ......................................................................................

Surface Mount Schottky Rectifier Reverse Voltage 20~40V Forward Current 2A

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2 Phase High Voltage DC Motor Driver IC

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2 Phase High Voltage DC Motor Driver IC

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2 Phase High Voltage DC Motor Driver IC

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2 Phase High Voltage DC Motor Driver IC

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EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode

文件：342.53 Kbytes Page：8 Pages

EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode

文件：342.53 Kbytes Page：8 Pages

封装/外壳：模块 包装：托盘 描述：IGBT MOD 1200V 325A 1150W 分立半导体产品 晶体管 - IGBT - 模块

EconoPACK B-series module with trench/fieldstop IGBT4 and optimized EmCon diode

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封装/外壳：模块 包装：托盘 描述：IGBT MOD 1200V 320A 1100W 分立半导体产品 晶体管 - IGBT - 模块

EconoPACK?? Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC

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EconoPACK?? Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / bereits aufgetragenem Thermal Interface Material

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EconoPACK™ Modul mit Trench/Feldstop IGBT³ und Emitter Controlled3 Diode

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EconoPACK?? Modul mit Trench/Feldstop IGBT4 und Emitter Controlled쨀 Diode

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EconoPACK?? Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und PressFIT / NTC

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Miniature Slides for High Frequency

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Miniature Slides for High Frequency

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MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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