IGBT-modules

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EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

EconoPACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC / bereits aufgetragenem Thermal Interface Material

Electrical Features • Low switching losses • Low VCEsat • Tvj op = 150°C • VCEsat with positive temperature coefficient Mechanical Features • High power and thermal cycling capability • Integrated NTC temperature sensor • Copper base plate • PressFIT contact technology • Standard housi

IGBT-modules

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封装/外壳：模块 包装：散装 描述：IGBT MOD 1200V 280A 1000W 分立半导体产品 晶体管 - IGBT - 模块

包装：托盘 描述：IGBT MODULE LOW PWR ECONO3-4 分立半导体产品 晶体管 - IGBT - 模块

62mm C-Serien Modul mit schnellem Trench

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