4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

SILICON PNP TRANSISTOR

DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP TRANSISTOR

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

Silicon PNP Transistor Low Noise, High Gain Amplifier

Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu ration voltage, tight beta control, and excellent low noise characteristics

3-Terminal Adjustable Current Sources

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