8 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

文件：489.59 Kbytes Page：3 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：54.85 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：260.39 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：47.99 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：178.49 Kbytes Page：3 Pages

8.0AMP. Glass Passivated Fast Recovery Rectifiers

文件：203.15 Kbytes Page：2 Pages

快恢复二极管

封装/外壳：TO-220-2 包装：散装 描述：DIODE FAST REC TO-220AC 分立半导体产品 二极管 - 整流器 - 单

快恢复二极管

8 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

文件：416.41 Kbytes Page：3 Pages

封装/外壳：TO-220-2 隔离片 包装：散装 描述：DIODE FAST REC ITO-220AC 分立半导体产品 二极管 - 整流器 - 单

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

Silicon MOS IC

■ Features ● Allowing downsizing of the sets through the reduction of a parts count resulting from the voltage step-up utilizing a coil instead of a transformer and employing the thin surface mounting package. ● Allowing low voltage drive (adaptable to a small and low-voltage battery), or VC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)