N-Channel QFET MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7.8A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 0.36Ω (Max.)@ VGS = 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13pF)

200V N-Channel MOSFET

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V N-Channel MOSFET

Description This N-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s proprietary planar stripe, DMOS technology. Features • 6.8 A, 200 V, RDS(on)= 0.36 Ω(Max.) @ VGS= 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13 pF)