200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12.8A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.14Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

200V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

isc N-Channel MOSFET Transistor

文件：299.49 Kbytes Page：2 Pages

200V N-Channel MOSFET-M

文件：5.07505 Mbytes Page：10 Pages

200V N-Channel MOSFET-T

文件：2.3194 Mbytes Page：8 Pages