位置：首页 > IC中文资料第584页 > FQPF12N20
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF12N20 | 200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQPF12N20 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
FastSwitching 文件：67.86 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel200V(D-S)MOSFET 文件：1.00995 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
FQPF12N20产品属性
- 类型
描述
- 型号
FQPF12N20
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO220F |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220F |
10 |
原装正品,假一罚十! |
|||
FCS |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
FAIRCHILD/仙童 |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FSC |
2015+ |
TO220F |
19898 |
专业代理原装现货,特价热卖! |
|||
FAIRCHILD/仙童 |
23+ |
TO-220F |
1000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FSC仙童 |
25+23+ |
TO-220F |
25010 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
FAIRCHILD |
24+ |
TO-220F |
8866 |
||||
Freescale(飞思卡尔) |
2022+ |
60000 |
原厂原装,假一罚十 |
FQPF12N20芯片相关品牌
FQPF12N20规格书下载地址
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FQPF12N20数据表相关新闻
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-15
DdatasheetPDF页码索引
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