位置：首页 > IC中文资料 > FQP20N06MOS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 |   | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 平伟实业 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2022+ |
TO252 |
7600 |
原厂原装,假一罚十 |
|||
UMW/广东友台半导体 |
2450+ |
TO-252-2 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON |
2021+ |
TO252 |
7600 |
原装现货，欢迎询价 |
|||
ON |
24+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
GT/YGMOS |
23+ |
TO-252 |
90000 |
||||
INFINEON |
23+ |
SOT-252 |
3000 |
原装正品假一罚百!可开增票! |
|||
24+ |
SOT-252 |
5000 |
全现原装公司现货 |
FQP20N06MOS规格书下载地址
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DdatasheetPDF页码索引
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