位置：首页 > IC中文资料第4122页 > FQI13N10TU
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel100-V(D-S)MOSFET 文件：773.51 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：354.05 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
FQI13N10TU产品属性
- 类型
描述
- 型号
FQI13N10TU
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
|||
23+ |
N/A |
88000 |
一级代理放心采购 |
||||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
|||
- |
21+ROHS |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
TO-263 |
499585 |
16余年资质 绝对原盒原盘 更多数量 |
||||
CET(华瑞) |
2112+ |
TO-263 |
105000 |
10个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
2022+ |
TO-263 |
79999 |
||||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET(华瑞) |
23+ |
TO263 |
6000 |
诚信服务，绝对原装原盘 |
|||
CET/華瑞 |
2407+ |
con |
10750 |
只有原装!量大可以订!一片起卖! |
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