位置：首页 > IC中文资料第1273页 > FQB6N90TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
900V N-Channel MOSFET 文件：604.41 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | ||
6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
N-Channel Power MOSFET 文件：403.88 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | ||
6.2A, 900V N-CHANNEL POWER MOSFET 文件：203.47 Kbytes Page：5 Pages | UTC 友顺 | | ||
900V N-Channel MOSFET 文件：789.54 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-CHANNEL POWER MOSFET 文件：251.69 Kbytes Page：5 Pages | UTC 友顺 | |
FQB6N90TM产品属性
- 类型
描述
- 型号
FQB6N90TM
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
SOT263 |
42150 |
||||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRC |
2023+ |
TO-263(D2PAK |
50000 |
原装现货 |
|||
FAIRCHILD/仙童 |
23+ |
SOT263 |
8000 |
只做原装现货 |
|||
FAIRCHILD |
20+ |
TO-263(D2PAK) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
SOT263 |
22+ |
6000 |
十年配单,只做原装 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHILD/仙童 |
24+ |
TO-263 |
60000 |
||||
FAIRCHILD/仙童 |
23+ |
TO-263 |
59810 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
FQB6N90TM芯片相关品牌
FQB6N90TM规格书下载地址
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FQB6N90TM数据表相关新闻
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2019-8-15
DdatasheetPDF页码索引
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