位置：首页 > IC中文资料第3849页 > FQB6N60TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 |   | ||
Avalanche Energy Specified DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements | ISC 无锡固电 | | ||
N-CHANNEL POWER MOSFET 文件：460.3 Kbytes Page：6 Pages | ZSELEC 淄博圣诺 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel 600V (D-S) Power MOSFET 文件：1.0803 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
FQB6N60TM产品属性
- 类型
描述
- 型号
FQB6N60TM
- 功能描述
MOSFET 600V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIKOS |
24+ |
NA/ |
15000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
OKI |
23+ |
PLCC |
1122 |
全新原装假一赔十 |
|||
UTC/友顺 |
25+ |
TO-220 |
55000 |
UTC/友顺6N60L-A-TA3-T即刻询购立享优惠#长期有货 |
|||
UTC/友顺 |
2450+ |
TO-220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INMET |
23+ |
N(MF) |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TO-220F |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
华晶 |
TO-220F |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
士兰微/IFR/仙童/WG |
25+ |
TO-220F/251/252 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
F |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
INMET |
2023+ |
N(M/F) |
25 |
weinschel 衰减器库存大量现货,欢迎电寻 |
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FQB6N60TM规格书下载地址
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FQB6N60TM数据表相关新闻
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2019-8-15
DdatasheetPDF页码索引
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