900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

功率 MOSFET，N 沟道，QFET®，900 V，5.4 A，2.3 Ω，D2PAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •5.4A, 900V, RDS(on)= 2.3Ω（最大值）@VGS = 10 V, ID = 2.7A栅极电荷低（典型值：31nC)\n•低 Crss（典型值13pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

N-Channel QFET MOSFET

文件：709.91 Kbytes Page：9 Pages

N-Channel QFET짰 MOSFET 900 V, 5.4 A, 2.3 廓

文件：785.82 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：387.65 Kbytes Page：2 Pages

N-Channel QFET MOSFET

文件：709.91 Kbytes Page：9 Pages

N-Channel QFET짰 MOSFET 900 V, 5.4 A, 2.3 廓

文件：785.82 Kbytes Page：8 Pages

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

N-CHANNEL POWER MOSFETS

文件：264.59 Kbytes Page：5 Pages

ADVANCED POWER MOSFET

文件：281.89 Kbytes Page：6 Pages