丝印代码：FQB22P10；P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt © Power Switch

MOS(场效应管)

100V，P 沟道，QFET®，-22A，125mΩ

这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合音频放大器、高效开关DC/DC转换器以及DC电机控制等低压应用。 -22 A、-100 V、RDS(on) = 0.125Ω (VGS = -10 V)\n 低栅极电荷（典型值40 nC）\n 低Crss（典型值160pF）\n 快速开关\n 100% 经过雪崩击穿测试\n 提高了 dv/dt 性能\n 175°C最大结温额定值\n 符合 AEC Q101 标准\n 符合 RoHS 标准;

100V P-Channel MOSFET

文件：662.96 Kbytes Page：8 Pages

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

文件：625.7 Kbytes Page：8 Pages